Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The va...
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| Main Authors: | , |
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| Format: | Article |
| Language: | en |
| Published: |
Elsevier GmbH
2017
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| Subjects: | |
| Online Access: | http://ir.unimas.my/id/eprint/14954/2/Large.pdf http://ir.unimas.my/id/eprint/14954/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006725466&doi=10.1016%2fj.ijleo.2016.11.161&partnerID=40&md5=895d0b9a424fbd271c45dd11d3716147 |
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