Effect of different dielectric materials for Ultrathin Oxide
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| Format: | Learning Object |
| Language: | en |
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Universiti Malaysia Perlis
2008
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| Online Access: | http://dspace.unimap.edu.my/123456789/2007 |
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| _version_ | 1831781335034757120 |
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| author | Zarimawaty Zailan |
| author2 | Mohd Hafiz Ismail (Advisor) |
| author_facet | Mohd Hafiz Ismail (Advisor) Zarimawaty Zailan |
| author_sort | Zarimawaty Zailan |
| building | UniMAP Library |
| collection | Institutional Repository |
| content_provider | Universiti Malaysia Perlis |
| content_source | UniMAP Library Digital Repository |
| continent | Asia |
| country | Malaysia |
| description | Access is limited to UniMAP community. |
| format | Learning Object |
| id | my.unimap-2007 |
| institution | Universiti Malaysia Perlis |
| language | en |
| publishDate | 2008 |
| publisher | Universiti Malaysia Perlis |
| record_format | dspace |
| spelling | my.unimap-20072008-09-15T09:07:12Z Effect of different dielectric materials for Ultrathin Oxide Zarimawaty Zailan Mohd Hafiz Ismail (Advisor) Dielectrics Silicon oxide films Semiconductors Ultrathin oxide Lower leakage current High-k materials Integrated circuits Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Access is limited to UniMAP community. This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) for an improved performance according to increase permittivity, physical thickness characteristic and reduced leakage current. Design considerations for ultrathin gate oxide MOSFET devices are presented. Based on simulation and theory background it is shown that the most important parameters are the type of dielectrics materials and deposit thickness of dielectric materials. Experimental evidence for ultrathin gate oxide has been presented. 2008-09-09T05:29:21Z 2008-09-09T05:29:21Z 2008-04 Learning Object http://dspace.unimap.edu.my/123456789/2007 en Universiti Malaysia Perlis School of Microelectronic Engineering |
| spellingShingle | Dielectrics Silicon oxide films Semiconductors Ultrathin oxide Lower leakage current High-k materials Integrated circuits Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Zarimawaty Zailan Effect of different dielectric materials for Ultrathin Oxide |
| title | Effect of different dielectric materials for Ultrathin Oxide |
| title_full | Effect of different dielectric materials for Ultrathin Oxide |
| title_fullStr | Effect of different dielectric materials for Ultrathin Oxide |
| title_full_unstemmed | Effect of different dielectric materials for Ultrathin Oxide |
| title_short | Effect of different dielectric materials for Ultrathin Oxide |
| title_sort | effect of different dielectric materials for ultrathin oxide |
| topic | Dielectrics Silicon oxide films Semiconductors Ultrathin oxide Lower leakage current High-k materials Integrated circuits Metal Oxide Semiconductor Field Effect Transistor (MOSFET) |
| url | http://dspace.unimap.edu.my/123456789/2007 |
| url_provider | http://dspace.unimap.edu.my/ |