Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
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| Format: | Learning Object |
| Language: | en |
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Universiti Malaysia Perlis
2008
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| Online Access: | http://dspace.unimap.edu.my/123456789/1995 |
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| _version_ | 1831781324342427648 |
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| author | Mohd Adam Alias |
| author2 | Ruslinda A. Rahim (Advisor) |
| author_facet | Ruslinda A. Rahim (Advisor) Mohd Adam Alias |
| author_sort | Mohd Adam Alias |
| building | UniMAP Library |
| collection | Institutional Repository |
| content_provider | Universiti Malaysia Perlis |
| content_source | UniMAP Library Digital Repository |
| continent | Asia |
| country | Malaysia |
| description | Access is limited to UniMAP community. |
| format | Learning Object |
| id | my.unimap-1995 |
| institution | Universiti Malaysia Perlis |
| language | en |
| publishDate | 2008 |
| publisher | Universiti Malaysia Perlis |
| record_format | dspace |
| spelling | my.unimap-19952008-10-08T03:25:48Z Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness Mohd Adam Alias Ruslinda A. Rahim (Advisor) Oxidation Silicon -- Oxidation Silicon oxide Semiconductor wafers Microelectronics Silicon Access is limited to UniMAP community. Oxidation is a process used in wafer fabrication. The goal of oxidation is to grow a high quality oxide layer on a silicon substrate. During oxidation a chemical reaction between the oxidants and the silicon atoms produces a layer of oxide on the silicon surface of the wafer. It is often the first step in wafer fabrication and will be repeated multiple times throughout the fabrication process. Oxidation takes place in an oxidation tube. During the reaction silicon reacts with oxidants to form silicon oxide layers. Typical operating temperature is between 900°C and 1,200°C. The oxide growth rate increases with temperature. In microfabrication, thermal oxidation is a way to produce a thin layer of oxide(usually silicon dioxide) on the surface of a wafer (semiconductor). The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal-Grove model. Thermal oxidation may be applied to different materials, but this project will only consider oxidation of silicon substrates to produce silicon dioxide. 2008-09-08T13:20:52Z 2008-09-08T13:20:52Z 2008-04 Learning Object http://dspace.unimap.edu.my/123456789/1995 en Universiti Malaysia Perlis School of Microelectronic Engineering |
| spellingShingle | Oxidation Silicon -- Oxidation Silicon oxide Semiconductor wafers Microelectronics Silicon Mohd Adam Alias Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness |
| title | Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness |
| title_full | Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness |
| title_fullStr | Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness |
| title_full_unstemmed | Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness |
| title_short | Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness |
| title_sort | theoretical study, simulation & fabrication of dry oxidation in terms of sio2 layer thickness, resistivity & surface roughness |
| topic | Oxidation Silicon -- Oxidation Silicon oxide Semiconductor wafers Microelectronics Silicon |
| url | http://dspace.unimap.edu.my/123456789/1995 |
| url_provider | http://dspace.unimap.edu.my/ |