Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile

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Bibliographic Details
Main Author: Zaharah Mohamed
Other Authors: Nur Juliana Juhari (Advisor)
Format: Learning Object
Language:en
Published: Universiti Malaysia Perlis 2008
Subjects:
Online Access:http://dspace.unimap.edu.my/123456789/1993
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_version_ 1831781323766759424
author Zaharah Mohamed
author2 Nur Juliana Juhari (Advisor)
author_facet Nur Juliana Juhari (Advisor)
Zaharah Mohamed
author_sort Zaharah Mohamed
building UniMAP Library
collection Institutional Repository
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
continent Asia
country Malaysia
description Access is limited to UniMAP community.
format Learning Object
id my.unimap-1993
institution Universiti Malaysia Perlis
language en
publishDate 2008
publisher Universiti Malaysia Perlis
record_format dspace
spelling my.unimap-19932008-09-08T13:01:17Z Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile Zaharah Mohamed Nur Juliana Juhari (Advisor) Semiconductors -- Etching Plasma etching Silicon oxide Semiconductors -- Design and construction Integrated circuits Access is limited to UniMAP community. The principal focus of this project is dry etching technique by using the Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). An (ICP) system was chosen because of its high plasma density and low cost relative to other high density plasma etching systems. The etch rates and picture size were studied as a function of ICP power, pressure, RF power bias, process time and gas composition. Dry etching technique is favoured in most etching work due to it’s etch rate properties. This project to provide a recipe for get the effect of different gases parameter in dry etching process on etch rate profile. For obtain the profile etch rate and picture size by using a profilometer and Scanning Electron Microscope (SEM) imaging. 2008-09-08T13:01:17Z 2008-09-08T13:01:17Z 2008-04 Learning Object http://dspace.unimap.edu.my/123456789/1993 en Universiti Malaysia Perlis School of Microelectronic Engineering
spellingShingle Semiconductors -- Etching
Plasma etching
Silicon oxide
Semiconductors -- Design and construction
Integrated circuits
Zaharah Mohamed
Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_full Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_fullStr Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_full_unstemmed Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_short Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_sort study of the effect of different gases parameter in dry etching process on etch rate profile
topic Semiconductors -- Etching
Plasma etching
Silicon oxide
Semiconductors -- Design and construction
Integrated circuits
url http://dspace.unimap.edu.my/123456789/1993
url_provider http://dspace.unimap.edu.my/