Ling, Y. S., & (Advisor), N. O. (2008). The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation. Universiti Malaysia Perlis.
Chicago Style (17th ed.) CitationLing, Yip Siew, and Noraini Othman (Advisor). The Study on the Effects of Varying Dopant Concentration and Diffusion Time in the Design of Silicon Avalanche Diode with Minimum Vbr of 120v+20% by Simulation. Universiti Malaysia Perlis, 2008.
MLA (9th ed.) CitationLing, Yip Siew, and Noraini Othman (Advisor). The Study on the Effects of Varying Dopant Concentration and Diffusion Time in the Design of Silicon Avalanche Diode with Minimum Vbr of 120v+20% by Simulation. Universiti Malaysia Perlis, 2008.
Warning: These citations may not always be 100% accurate.