Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation

Due to its suitable bandgap and excellent stability, 3C-SiC is being investigated as one of the promising candidates for photoelectrochemical (PEC) water oxidation. However, the limited surface activity and short carrier lifetime prevent 3C-SiC photoanodes from facilitating efficient PEC water split...

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Main Authors: Linyi Wu, Shuchang Guan, Binghua Zhou, Shien Guo, Jie Wang, Ling Wu, Gan Jet Hong Melvin, Josue Ortiz-Medina, Mingxi Wang, Hironori Ogata, Masaki Tanemura, Yoong Ahm Kim
Format: Article
Language:en
Published: The Royal Society of Chemistry 2024
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Online Access:https://eprints.ums.edu.my/id/eprint/44779/1/FULLTEXT.pdf
https://eprints.ums.edu.my/id/eprint/44779/
https://doi.org/10.1039/D4TA02612H
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author Linyi Wu
Shuchang Guan
Binghua Zhou
Shien Guo
Jie Wang
Ling Wu
Gan Jet Hong Melvin
Josue Ortiz-Medina
Mingxi Wang
Hironori Ogata
Masaki Tanemura
Yoong Ahm Kim
author_facet Linyi Wu
Shuchang Guan
Binghua Zhou
Shien Guo
Jie Wang
Ling Wu
Gan Jet Hong Melvin
Josue Ortiz-Medina
Mingxi Wang
Hironori Ogata
Masaki Tanemura
Yoong Ahm Kim
author_sort Linyi Wu
building UMS Library
collection Institutional Repository
content_provider Universiti Malaysia Sabah
content_source UMS Institutional Repository
continent Asia
country Malaysia
description Due to its suitable bandgap and excellent stability, 3C-SiC is being investigated as one of the promising candidates for photoelectrochemical (PEC) water oxidation. However, the limited surface activity and short carrier lifetime prevent 3C-SiC photoanodes from facilitating efficient PEC water splitting. To tackle these problems, this work proposes a plasma technique to control the crystal structure and optical characteristics of 3C-SiC. Nitrogen plasma induces carbon vacancies (Vc) and Si–N bonds, further leading to a narrower bandgap of 3C-SiC. The combination of Vc and N doping enhanced the light trapping capability of the electrode, thereby improving the efficiency of electron–hole pair separation and charge transfer, resulting in an accelerated water oxidation reaction, i.e., photocurrent density (2.50 mA cm−2 at 1.23 VRHE) increased by 7.6 times compared to that of pristine SiC. This work offers an effective strategy for regulating the electronic structure of SiC-based photoanodes by plasma treatment, which may be extended to other photoelectrodes for PEC application.
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spelling my.ums.eprints-447792025-08-08T07:31:45Z https://eprints.ums.edu.my/id/eprint/44779/ Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation Linyi Wu Shuchang Guan Binghua Zhou Shien Guo Jie Wang Ling Wu Gan Jet Hong Melvin Josue Ortiz-Medina Mingxi Wang Hironori Ogata Masaki Tanemura Yoong Ahm Kim QD146-197 Inorganic chemistry QD901-999 Crystallography Due to its suitable bandgap and excellent stability, 3C-SiC is being investigated as one of the promising candidates for photoelectrochemical (PEC) water oxidation. However, the limited surface activity and short carrier lifetime prevent 3C-SiC photoanodes from facilitating efficient PEC water splitting. To tackle these problems, this work proposes a plasma technique to control the crystal structure and optical characteristics of 3C-SiC. Nitrogen plasma induces carbon vacancies (Vc) and Si–N bonds, further leading to a narrower bandgap of 3C-SiC. The combination of Vc and N doping enhanced the light trapping capability of the electrode, thereby improving the efficiency of electron–hole pair separation and charge transfer, resulting in an accelerated water oxidation reaction, i.e., photocurrent density (2.50 mA cm−2 at 1.23 VRHE) increased by 7.6 times compared to that of pristine SiC. This work offers an effective strategy for regulating the electronic structure of SiC-based photoanodes by plasma treatment, which may be extended to other photoelectrodes for PEC application. The Royal Society of Chemistry 2024 Article NonPeerReviewed text en https://eprints.ums.edu.my/id/eprint/44779/1/FULLTEXT.pdf Linyi Wu and Shuchang Guan and Binghua Zhou and Shien Guo and Jie Wang and Ling Wu and Gan Jet Hong Melvin and Josue Ortiz-Medina and Mingxi Wang and Hironori Ogata and Masaki Tanemura and Yoong Ahm Kim (2024) Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation. Journal of Materials Chemistry A, 12. pp. 19201-19211. ISSN 2050-7488 https://doi.org/10.1039/D4TA02612H
spellingShingle QD146-197 Inorganic chemistry
QD901-999 Crystallography
Linyi Wu
Shuchang Guan
Binghua Zhou
Shien Guo
Jie Wang
Ling Wu
Gan Jet Hong Melvin
Josue Ortiz-Medina
Mingxi Wang
Hironori Ogata
Masaki Tanemura
Yoong Ahm Kim
Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation
title Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation
title_full Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation
title_fullStr Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation
title_full_unstemmed Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation
title_short Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation
title_sort plasma-induced n doping and carbon vacancies in a self-supporting 3c-sic photoanode for efficient photoelectrochemical water oxidation
topic QD146-197 Inorganic chemistry
QD901-999 Crystallography
url https://eprints.ums.edu.my/id/eprint/44779/1/FULLTEXT.pdf
https://eprints.ums.edu.my/id/eprint/44779/
https://doi.org/10.1039/D4TA02612H
url_provider http://eprints.ums.edu.my/