Investigation on transparent copper gallium oxide thin films fabricated by radio frequency sputtering method
One type of semiconductor that is being examined in this study is CuGaO2 which is . a p-type transparent semiconductor. The aim of this study is to investigate the parameter during and after deposition that will give the best result in terms of the transparency and the conductivity of the CuGaO2 thi...
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| Format: | Thesis |
| Language: | en en |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/43505/1/ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/43505/2/FULLTEXT.pdf https://eprints.ums.edu.my/id/eprint/43505/ |
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| Summary: | One type of semiconductor that is being examined in this study is CuGaO2 which is . a p-type transparent semiconductor. The aim of this study is to investigate the parameter during and after deposition that will give the best result in terms of the transparency and the conductivity of the CuGaO2 thin film. The CuGaO2 thin film is fabricated by RF magnetron sputtering deposition at varying conditions such as different substrate temperature, annealing temperature and annealing duration. A transparent p-type thin film CuGaO2 was successfully deposited on the glass substrate at different temperature ranging from 100° C to 250° C by using RF sputtering deposition method. XRD results indicate that the thin film is still in amorphous state due to insufficient thermal energy for the crystallization. A different annealing temperatures ranging from 200° C to 500° C for three hours improved the samples crystalinity. The X-ray diffraction analysis shows (015) plane orientation at around 44.0° and the peak increase with increasing temperature and this indicates the thin film changes from amorphous to polycrystalline due to the atoms has sufficient thermal energy to arrange and improve the crystal structure. The RMS surface roughness values are decreasing with increasing annealing temperature and duration. Sample that was annealed at 500° C for three hours show better crystal structures. The optical bandgap of the thin film is 3.3 eV. The transparency of all the thin film samples is around 70%. A transparent heterojunction devices is fabricated on transparent ITO coated glass substrate with device structure of ITO/n-ZnO/p-CuGaO2/AI. I-V measurement show the device annealed for one hour at 500° C have a better rectification behavior which the turn on voltage is found to be 1.8 V. |
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