Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna
Schottky diodes are fabricated on n-Aluminium Gallium Arsenide / Gallium Arsenide (n-AlGaAs/GaAs) high-electron-mobility-transistor (HEMT) structure due to availability of high electron mobility and capability of fast switching performance. The processing steps used in the fabrication are the conven...
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Horizon Research Publishing
2015
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| Online Access: | https://eprints.ums.edu.my/id/eprint/32021/1/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna_ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/32021/2/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna.pdf https://eprints.ums.edu.my/id/eprint/32021/ https://www.hrpub.org/download/20150620/UJEEE2-14903577.pdf https://doi.org/10.13189/ujeee.2015.030302 |
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| author | Norfarariyanti Parimon Rosalyn R Porle Mazlina Mamat |
| author_facet | Norfarariyanti Parimon Rosalyn R Porle Mazlina Mamat |
| author_sort | Norfarariyanti Parimon |
| building | UMS Library |
| collection | Institutional Repository |
| content_provider | Universiti Malaysia Sabah |
| content_source | UMS Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | Schottky diodes are fabricated on n-Aluminium Gallium Arsenide / Gallium Arsenide (n-AlGaAs/GaAs) high-electron-mobility-transistor (HEMT) structure due to availability of high electron mobility and capability of fast switching performance. The processing steps used in the fabrication are the conventional steps used in standard GaAs processing. The ohmic and Schottky contacts of Schottky diodes are facilitated with ground-signal-ground (G-S-G) coplanar waveguide (CPW) transmission line structure so that it may provide the possibility of direct on-chip integration without insertion of a matching circuit with dipole antenna. |
| format | Article |
| id | my.ums.eprints-32021 |
| institution | Universiti Malaysia Sabah |
| language | en en |
| publishDate | 2015 |
| publisher | Horizon Research Publishing |
| record_format | eprints |
| spelling | my.ums.eprints-320212022-03-24T06:34:26Z https://eprints.ums.edu.my/id/eprint/32021/ Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna Norfarariyanti Parimon Rosalyn R Porle Mazlina Mamat TK7800-8360 Electronics Schottky diodes are fabricated on n-Aluminium Gallium Arsenide / Gallium Arsenide (n-AlGaAs/GaAs) high-electron-mobility-transistor (HEMT) structure due to availability of high electron mobility and capability of fast switching performance. The processing steps used in the fabrication are the conventional steps used in standard GaAs processing. The ohmic and Schottky contacts of Schottky diodes are facilitated with ground-signal-ground (G-S-G) coplanar waveguide (CPW) transmission line structure so that it may provide the possibility of direct on-chip integration without insertion of a matching circuit with dipole antenna. Horizon Research Publishing 2015 Article PeerReviewed text en https://eprints.ums.edu.my/id/eprint/32021/1/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna_ABSTRACT.pdf text en https://eprints.ums.edu.my/id/eprint/32021/2/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna.pdf Norfarariyanti Parimon and Rosalyn R Porle and Mazlina Mamat (2015) Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna. Universal Journal of Electrical and Electronic Engineering, 3. pp. 81-84. ISSN 2332-3280 (P-ISSN) , 2332-3299 (E-ISSN) https://www.hrpub.org/download/20150620/UJEEE2-14903577.pdf https://doi.org/10.13189/ujeee.2015.030302 https://doi.org/10.13189/ujeee.2015.030302 |
| spellingShingle | TK7800-8360 Electronics Norfarariyanti Parimon Rosalyn R Porle Mazlina Mamat Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna |
| title | Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna |
| title_full | Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna |
| title_fullStr | Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna |
| title_full_unstemmed | Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna |
| title_short | Fabrication Process of n-AlGaAs/GaAs Schottky Diodes for on-chip Direct Integrated with Dipole Antenna |
| title_sort | fabrication process of n-algaas/gaas schottky diodes for on-chip direct integrated with dipole antenna |
| topic | TK7800-8360 Electronics |
| url | https://eprints.ums.edu.my/id/eprint/32021/1/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna_ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/32021/2/Fabrication%20Process%20of%20Schottky%20Diodes%20for%20on-chip%20Direct%20Integrated%20with%20Dipole%20Antenna.pdf https://eprints.ums.edu.my/id/eprint/32021/ https://www.hrpub.org/download/20150620/UJEEE2-14903577.pdf https://doi.org/10.13189/ujeee.2015.030302 https://doi.org/10.13189/ujeee.2015.030302 |
| url_provider | http://eprints.ums.edu.my/ |