Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering
In space, semiconductor devices are vulnerable to various effect of high energy level of radiation causing single event upsets (SEU), damaging or altering the lattice structure. In this work, p-CuGaO2 was selected due to its relatively wide bandgap and a visibility transmittance up to 80% as a poten...
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IOP Publishing Ltd
2019
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| Online Access: | https://eprints.ums.edu.my/id/eprint/30954/3/Structural%20and%20Optical%20Properties%20of%20Gamma%20Irradiated%20CuGaO2%20Thin%20Film%20deposited%20by%20Radio%20Frequency%20%28RF%29%20Sputtering.pdf https://eprints.ums.edu.my/id/eprint/30954/2/Structural%20and%20optical%20properties%20of%20gamma%20irradiated%20cugao2%20thin%20film%20deposited%20by%20radio%20frequency%20%28rf%29%20sputtering-ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/30954/ https://iopscience.iop.org/article/10.1088/1742-6596/1358/1/012047 http://doi.org/10.1088/1742-6596/1358/1/012047 |
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| author | Mivolil D.S Fuei Pien Chee Saafie Salleh Afishah Alias K A Mohd Salleh Sofian Ibrahim |
| author_facet | Mivolil D.S Fuei Pien Chee Saafie Salleh Afishah Alias K A Mohd Salleh Sofian Ibrahim |
| author_sort | Mivolil D.S |
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| content_provider | Universiti Malaysia Sabah |
| content_source | UMS Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | In space, semiconductor devices are vulnerable to various effect of high energy level of radiation causing single event upsets (SEU), damaging or altering the lattice structure. In this work, p-CuGaO2 was selected due to its relatively wide bandgap and a visibility transmittance up to 80% as a potential semiconductor material capable of withstanding harsh radiation environment. p-CuGaO2 thin films were deposited by RF powered sputtering on indium tin Oxide (ITO) substrates at 2500C deposition temperature and annealed at 300 oC. Structural morphology and optical properties of CuGaO2 thin film were investigated before and after irradiation. The samples were irradiated using Cobalt-60, gamma-ray with a dose ranging from 10 kGy-200 kGy. The structural properties reveal that the CuGaO2 films shows a diffraction peak at 2θ=38.0510 (012) before irradiation. The optical properties of deposited CuGaO2 thin film, exhibits approximately 75% optical transmittance in the invisible region at pre-irradiation and post-irradiation results shows a decrease of optical transmittance of 55%. At a dose of 200 kGy, the band gap of CuGaO2 is 3.62 eV which indicates that it is still within the acceptable range of a semiconductor properties. Early results of CuGaO2 shows good mitigation towards irradiation thus indicating that CuGaO2 thin film is capable of withstanding harsh radiation environment while retaining its semiconductor properties. |
| format | Conference or Workshop Item |
| id | my.ums.eprints-30954 |
| institution | Universiti Malaysia Sabah |
| language | en en |
| publishDate | 2019 |
| publisher | IOP Publishing Ltd |
| record_format | eprints |
| spelling | my.ums.eprints-309542021-10-15T03:52:28Z https://eprints.ums.edu.my/id/eprint/30954/ Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering Mivolil D.S Fuei Pien Chee Saafie Salleh Afishah Alias K A Mohd Salleh Sofian Ibrahim QC717.6-718.8 Plasma physics. Ionized gases TK7800-8360 Electronics In space, semiconductor devices are vulnerable to various effect of high energy level of radiation causing single event upsets (SEU), damaging or altering the lattice structure. In this work, p-CuGaO2 was selected due to its relatively wide bandgap and a visibility transmittance up to 80% as a potential semiconductor material capable of withstanding harsh radiation environment. p-CuGaO2 thin films were deposited by RF powered sputtering on indium tin Oxide (ITO) substrates at 2500C deposition temperature and annealed at 300 oC. Structural morphology and optical properties of CuGaO2 thin film were investigated before and after irradiation. The samples were irradiated using Cobalt-60, gamma-ray with a dose ranging from 10 kGy-200 kGy. The structural properties reveal that the CuGaO2 films shows a diffraction peak at 2θ=38.0510 (012) before irradiation. The optical properties of deposited CuGaO2 thin film, exhibits approximately 75% optical transmittance in the invisible region at pre-irradiation and post-irradiation results shows a decrease of optical transmittance of 55%. At a dose of 200 kGy, the band gap of CuGaO2 is 3.62 eV which indicates that it is still within the acceptable range of a semiconductor properties. Early results of CuGaO2 shows good mitigation towards irradiation thus indicating that CuGaO2 thin film is capable of withstanding harsh radiation environment while retaining its semiconductor properties. IOP Publishing Ltd 2019-11-08 Conference or Workshop Item PeerReviewed text en https://eprints.ums.edu.my/id/eprint/30954/3/Structural%20and%20Optical%20Properties%20of%20Gamma%20Irradiated%20CuGaO2%20Thin%20Film%20deposited%20by%20Radio%20Frequency%20%28RF%29%20Sputtering.pdf text en https://eprints.ums.edu.my/id/eprint/30954/2/Structural%20and%20optical%20properties%20of%20gamma%20irradiated%20cugao2%20thin%20film%20deposited%20by%20radio%20frequency%20%28rf%29%20sputtering-ABSTRACT.pdf Mivolil D.S and Fuei Pien Chee and Saafie Salleh and Afishah Alias and K A Mohd Salleh and Sofian Ibrahim (2019) Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering. In: 12th Seminar on Science and Technology, 2-3 October 2018, Kota Kinabalu, Sabah, Malaysia. https://iopscience.iop.org/article/10.1088/1742-6596/1358/1/012047 http://doi.org/10.1088/1742-6596/1358/1/012047 |
| spellingShingle | QC717.6-718.8 Plasma physics. Ionized gases TK7800-8360 Electronics Mivolil D.S Fuei Pien Chee Saafie Salleh Afishah Alias K A Mohd Salleh Sofian Ibrahim Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering |
| title | Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering |
| title_full | Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering |
| title_fullStr | Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering |
| title_full_unstemmed | Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering |
| title_short | Structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering |
| title_sort | structural and optical properties of gamma irradiated cugao2 thin film deposited by radio frequency (rf) sputtering |
| topic | QC717.6-718.8 Plasma physics. Ionized gases TK7800-8360 Electronics |
| url | https://eprints.ums.edu.my/id/eprint/30954/3/Structural%20and%20Optical%20Properties%20of%20Gamma%20Irradiated%20CuGaO2%20Thin%20Film%20deposited%20by%20Radio%20Frequency%20%28RF%29%20Sputtering.pdf https://eprints.ums.edu.my/id/eprint/30954/2/Structural%20and%20optical%20properties%20of%20gamma%20irradiated%20cugao2%20thin%20film%20deposited%20by%20radio%20frequency%20%28rf%29%20sputtering-ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/30954/ https://iopscience.iop.org/article/10.1088/1742-6596/1358/1/012047 http://doi.org/10.1088/1742-6596/1358/1/012047 |
| url_provider | http://eprints.ums.edu.my/ |