Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device
In this work solution processed novel poly-triarylamine (PTAA) organic p-type active layer on inorganic n-ZnO device transparency and electrical properties are investigated under illumination. Low cost organic-inorganic transparent hybrid hetero-junction (HHJ) is a promising candidate for next-gener...
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2020
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| Online Access: | https://eprints.ums.edu.my/id/eprint/25949/1/Low%20Leakage%20Current%20by%20Solution%20Processed%20PTAA-ZnO%20Transparent%20Hybrid%20Hetero-Junction%20Device.pdf https://eprints.ums.edu.my/id/eprint/25949/2/Low%20Leakage%20Current%20by%20Solution%20Processed%20PTAA-ZnO%20Transparent%20Hybrid%20Hetero-Junction%20Device1.pdf https://eprints.ums.edu.my/id/eprint/25949/ https://doi.org/10.1007/s13391-020-00235-y |
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| author | Bablu K. Ghosh Abdul I. A. Rani Khairul A. Mohamad Ismail Saad |
| author_facet | Bablu K. Ghosh Abdul I. A. Rani Khairul A. Mohamad Ismail Saad |
| author_sort | Bablu K. Ghosh |
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| content_provider | Universiti Malaysia Sabah |
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| continent | Asia |
| country | Malaysia |
| description | In this work solution processed novel poly-triarylamine (PTAA) organic p-type active layer on inorganic n-ZnO device transparency and electrical properties are investigated under illumination. Low cost organic-inorganic transparent hybrid hetero-junction (HHJ) is a promising candidate for next-generation photovoltaic applications. Greater band gap organic material window layer while inorganic material’s higher thermal stability as HHJ is suitable for detection and photovoltaic applications. However, hetero-interface defects associated leakage current is the key issue of undermining large-area device electrical performance. Hetero-interface defect associated carriers optical absorption limits transparency whereas leakage current density is reliant on physical property and band barrier effect. It is demanded to investigate hetero-device physical stuff and band barrier effect on electrical properties. Novel PTAA is deposited on RF-sputtered inorganic n-ZnO/ITO/glass substrate by spin-coating method. 100 and 60 nm PTAA thin films are deposited with 1,000 and 2,000 revolution per minute (rpm) growth sequence, respectively. PTAA as a transparent p-emitter is shown to absorb incident light beyond visible band, thereby it has promoted excitonic effect. Device I−V characterization carried out at different annealing temperatures and applied voltage. Suitable annealing condition leakage current is shown to reduce nearly 10-4A/cm2 and at higher applied field the greater rectifying I(+)/I(-) ratio is realized. Grain size is shown to increase with annealing effect however; leakage current is remained almost independent of grain size. |
| format | Article |
| id | my.ums.eprints-25949 |
| institution | Universiti Malaysia Sabah |
| language | en en |
| publishDate | 2020 |
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| spelling | my.ums.eprints-259492021-02-24T11:56:24Z https://eprints.ums.edu.my/id/eprint/25949/ Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device Bablu K. Ghosh Abdul I. A. Rani Khairul A. Mohamad Ismail Saad T Technology (General) TA Engineering (General). Civil engineering (General) In this work solution processed novel poly-triarylamine (PTAA) organic p-type active layer on inorganic n-ZnO device transparency and electrical properties are investigated under illumination. Low cost organic-inorganic transparent hybrid hetero-junction (HHJ) is a promising candidate for next-generation photovoltaic applications. Greater band gap organic material window layer while inorganic material’s higher thermal stability as HHJ is suitable for detection and photovoltaic applications. However, hetero-interface defects associated leakage current is the key issue of undermining large-area device electrical performance. Hetero-interface defect associated carriers optical absorption limits transparency whereas leakage current density is reliant on physical property and band barrier effect. It is demanded to investigate hetero-device physical stuff and band barrier effect on electrical properties. Novel PTAA is deposited on RF-sputtered inorganic n-ZnO/ITO/glass substrate by spin-coating method. 100 and 60 nm PTAA thin films are deposited with 1,000 and 2,000 revolution per minute (rpm) growth sequence, respectively. PTAA as a transparent p-emitter is shown to absorb incident light beyond visible band, thereby it has promoted excitonic effect. Device I−V characterization carried out at different annealing temperatures and applied voltage. Suitable annealing condition leakage current is shown to reduce nearly 10-4A/cm2 and at higher applied field the greater rectifying I(+)/I(-) ratio is realized. Grain size is shown to increase with annealing effect however; leakage current is remained almost independent of grain size. 2020 Article PeerReviewed text en https://eprints.ums.edu.my/id/eprint/25949/1/Low%20Leakage%20Current%20by%20Solution%20Processed%20PTAA-ZnO%20Transparent%20Hybrid%20Hetero-Junction%20Device.pdf text en https://eprints.ums.edu.my/id/eprint/25949/2/Low%20Leakage%20Current%20by%20Solution%20Processed%20PTAA-ZnO%20Transparent%20Hybrid%20Hetero-Junction%20Device1.pdf Bablu K. Ghosh and Abdul I. A. Rani and Khairul A. Mohamad and Ismail Saad (2020) Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device. Electronic Materials Letters. pp. 1-9. https://doi.org/10.1007/s13391-020-00235-y |
| spellingShingle | T Technology (General) TA Engineering (General). Civil engineering (General) Bablu K. Ghosh Abdul I. A. Rani Khairul A. Mohamad Ismail Saad Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device |
| title | Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device |
| title_full | Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device |
| title_fullStr | Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device |
| title_full_unstemmed | Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device |
| title_short | Low Leakage Current by Solution Processed PTAA-ZnO Transparent Hybrid Hetero-Junction Device |
| title_sort | low leakage current by solution processed ptaa-zno transparent hybrid hetero-junction device |
| topic | T Technology (General) TA Engineering (General). Civil engineering (General) |
| url | https://eprints.ums.edu.my/id/eprint/25949/1/Low%20Leakage%20Current%20by%20Solution%20Processed%20PTAA-ZnO%20Transparent%20Hybrid%20Hetero-Junction%20Device.pdf https://eprints.ums.edu.my/id/eprint/25949/2/Low%20Leakage%20Current%20by%20Solution%20Processed%20PTAA-ZnO%20Transparent%20Hybrid%20Hetero-Junction%20Device1.pdf https://eprints.ums.edu.my/id/eprint/25949/ https://doi.org/10.1007/s13391-020-00235-y |
| url_provider | http://eprints.ums.edu.my/ |