Saad, I. (2013). Emerging nanoelectronics device design exploration incorporating vertical impact-ionization mosfet and strained (SiGe) technology. Universiti Malaysia Sabah.
Chicago Style (17th ed.) CitationSaad, Ismail. Emerging Nanoelectronics Device Design Exploration Incorporating Vertical Impact-ionization Mosfet and Strained (SiGe) Technology. Universiti Malaysia Sabah, 2013.
MLA (9th ed.) CitationSaad, Ismail. Emerging Nanoelectronics Device Design Exploration Incorporating Vertical Impact-ionization Mosfet and Strained (SiGe) Technology. Universiti Malaysia Sabah, 2013.
Warning: These citations may not always be 100% accurate.