n-Channel Organic Thin-Film Transistors based on Naphthalene-Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

Organic semiconductors have been the subject of interest for the past decade. Despite significant progress in the p-channel organic thin-film transistors (OTFTs), there are still problems concerning the development of n-channel OTFTs owing to the selection of n-channel organic materials, which are l...

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Bibliographic Details
Main Authors: Khairul Anuar Mohamad, Ismail Saad, Hisashi Fukuda
Format: Article
Language:en
Published: Japanese Journal of Applied Physics 2012
Online Access:https://eprints.ums.edu.my/id/eprint/21416/1/n%20Channel%20Organic%20Thin.pdf
https://eprints.ums.edu.my/id/eprint/21416/
https://www.doi.org/10.1109/ESciNano.2012.6149666
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Summary:Organic semiconductors have been the subject of interest for the past decade. Despite significant progress in the p-channel organic thin-film transistors (OTFTs), there are still problems concerning the development of n-channel OTFTs owing to the selection of n-channel organic materials, which are limited to a very small number of molecules and polymers [1], and also serious drawbacks, including poor solubility, difficulty of synthesis and unstable transistor operation under ambient atmosphere [2]. Since the first air-stable n-channel OTFTs based on naphthalenetetracarboxylic diimides was reported [3], a large number of n-channel organic materials have been based on either naphthalene diimide (NDI) — or perylene diimide (PDI)-based polymers. It is therefore clear that n-channel organic materials have an important role in the continuing development of organic-based circuits and products. In this study, we focused to elucidate the fabrication and characterization of n-channel OTFTs based on poly{[N, N'bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} [P(NDI2D-T2)]. Moreover, we also demonstrate organic transistor memory with an n-channel P(NDI2OD-T2) OTFTs using poly(3-hexylthiophene) (P3HT) as the charge trapping layer.