APA (7th ed.) Citation

Ghosh, B. K., ToruTanikawa, Hashimoto, A., Yamamoto, A., & Ito, Y. (2003). Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs. ELSEVIER SCIENCE.

Chicago Style (17th ed.) Citation

Ghosh, Bablu K., ToruTanikawa, Akihiro Hashimoto, Akio Yamamoto, and Yoshifumi Ito. Reduced-stress GaN Epitaxial Layers Grown on Si(1 1 1) by Using a Porous GaN Interlayer Converted from GaAs. ELSEVIER SCIENCE, 2003.

MLA (9th ed.) Citation

Ghosh, Bablu K., et al. Reduced-stress GaN Epitaxial Layers Grown on Si(1 1 1) by Using a Porous GaN Interlayer Converted from GaAs. ELSEVIER SCIENCE, 2003.