Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET
This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor. The working temperature range of this study is from -5...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
IEEE Xplore
2020
|
| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/30155/1/09166887.pdf http://umpir.ump.edu.my/id/eprint/30155/ https://ieeexplore.ieee.org/document/9166887 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1831527643519909888 |
|---|---|
| author | Agha, Firas Natheer Abdul-kadir Hashim, Yasir Shakib, Mohammed Nazmus |
| author_facet | Agha, Firas Natheer Abdul-kadir Hashim, Yasir Shakib, Mohammed Nazmus |
| author_sort | Agha, Firas Natheer Abdul-kadir |
| building | UMPSA Library |
| collection | Institutional Repository |
| content_provider | Universiti Malaysia Pahang Al-Sultan Abdullah |
| content_source | UMPSA Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | This research paper presents the effect of
working temperature on the ION, IOFF and ION/IOFF ratio of gate
all around nanowire TFET. The (Silvaco) simulation tool has
been used to investigate the temperature characteristics of a
transistor. The working temperature range of this study is
from -50 to 150 step-up 25 oC. The final results indicate that
the negative effects of increasing working temperature of gate
all around nanowire TFET due to decreasing of the ION/IOFF
ratio. Hence, the results for ION/IOFF ratio vs. working
temperature characteristics may lead to the use of TFET in
electronic circuits with lowest possible working temperature to
obtain higher ION/IOFF ratio. |
| format | Conference or Workshop Item |
| id | my.ump.umpir.30155 |
| institution | Universiti Malaysia Pahang |
| language | en |
| publishDate | 2020 |
| publisher | IEEE Xplore |
| record_format | eprints |
| spelling | my.ump.umpir.301552020-12-10T08:09:59Z http://umpir.ump.edu.my/id/eprint/30155/ Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET Agha, Firas Natheer Abdul-kadir Hashim, Yasir Shakib, Mohammed Nazmus TK Electrical engineering. Electronics Nuclear engineering This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor. The working temperature range of this study is from -50 to 150 step-up 25 oC. The final results indicate that the negative effects of increasing working temperature of gate all around nanowire TFET due to decreasing of the ION/IOFF ratio. Hence, the results for ION/IOFF ratio vs. working temperature characteristics may lead to the use of TFET in electronic circuits with lowest possible working temperature to obtain higher ION/IOFF ratio. IEEE Xplore 2020-07 Conference or Workshop Item PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/30155/1/09166887.pdf Agha, Firas Natheer Abdul-kadir and Hashim, Yasir and Shakib, Mohammed Nazmus (2020) Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET. In: IEEE International Conference on Semiconductor Electronics (ICSE) , 28-29 July, 2020 , Kuala Lumpur, Malaysia. pp. 1-4.. ISBN 978-1-7281-5968-3 (Published) https://ieeexplore.ieee.org/document/9166887 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Agha, Firas Natheer Abdul-kadir Hashim, Yasir Shakib, Mohammed Nazmus Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET |
| title | Temperature Impact on The ION/IOFF Ratio of Gate
All Around Nanowire TFET |
| title_full | Temperature Impact on The ION/IOFF Ratio of Gate
All Around Nanowire TFET |
| title_fullStr | Temperature Impact on The ION/IOFF Ratio of Gate
All Around Nanowire TFET |
| title_full_unstemmed | Temperature Impact on The ION/IOFF Ratio of Gate
All Around Nanowire TFET |
| title_short | Temperature Impact on The ION/IOFF Ratio of Gate
All Around Nanowire TFET |
| title_sort | temperature impact on the ion/ioff ratio of gate
all around nanowire tfet |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://umpir.ump.edu.my/id/eprint/30155/1/09166887.pdf http://umpir.ump.edu.my/id/eprint/30155/ https://ieeexplore.ieee.org/document/9166887 |
| url_provider | http://umpir.ump.edu.my/ |