Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications
The recent research work focuses on the realization of ITO/ZnO/Ag-based multifunctional devices. The fabricated devices exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The intermediate ZnO switching layers were...
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Institute of Physics
2025
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| Online Access: | http://umpir.ump.edu.my/id/eprint/44314/1/Modulation%20of%20structural%20and%20photoluminescence%20properties%20of%20ZnO.pdf http://umpir.ump.edu.my/id/eprint/44314/ https://doi.org/10.1088/2631-8695/adbcfa |
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| author | Kossar, Shahnaz Rasool, Asif Rafiudeen, Amiruddin Ahmad Syakirin, Ismail @ Rosdi M H, Mamat Sharma, Jyoti |
| author_facet | Kossar, Shahnaz Rasool, Asif Rafiudeen, Amiruddin Ahmad Syakirin, Ismail @ Rosdi M H, Mamat Sharma, Jyoti |
| author_sort | Kossar, Shahnaz |
| building | UMPSA Library |
| collection | Institutional Repository |
| content_provider | Universiti Malaysia Pahang Al-Sultan Abdullah |
| content_source | UMPSA Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | The recent research work focuses on the realization of ITO/ZnO/Ag-based multifunctional devices. The fabricated devices exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The intermediate ZnO switching layers were deposited using the spin-coating technique at 2500 rpm. The structural analysis validates the presence of wurtzite structure along the c-axis. The morphological analysis reveals that the grains are uniformly distributed of the deposited thin films. The PL emission spectrum of the ZnO thin film shows highly intensive peak at 382 nm. The obtained ZnO thin film was formed onto ITO substrate which was sandwiched between top and bottom Ag electrodes. The current–voltage measurements (I–V) and ln I–V plots characteristics of the fabricated ITO/ZnO/Ag devices were examined for UV photoresponse (under dark and UV illumination), and resistive switching (RS) behavior. The fabricated device shows a stable resistive switching characteristics and UV photoresponse with photoresponsivity (R) value of 0.52 mA W−1. The fabricated ITO/ZnO/Ag devices shows rise time 4.35 s and 9.25 s decay time respectively. The optical sensing mechanism of ITO/ZnO/Ag were explored by oxygen (O2) adsorption/desorption processes in Ag/ZnO and ITO/ZnO junctions across the interface. |
| format | Article |
| id | my.ump.umpir-44314 |
| institution | Universiti Malaysia Pahang |
| language | en |
| publishDate | 2025 |
| publisher | Institute of Physics |
| record_format | eprints |
| spelling | my.ump.umpir-443142025-09-22T00:44:10Z http://umpir.ump.edu.my/id/eprint/44314/ Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications Kossar, Shahnaz Rasool, Asif Rafiudeen, Amiruddin Ahmad Syakirin, Ismail @ Rosdi M H, Mamat Sharma, Jyoti TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering TP Chemical technology The recent research work focuses on the realization of ITO/ZnO/Ag-based multifunctional devices. The fabricated devices exhibits multi-task operations, including ultraviolet (UV) light detection and non-volatile resistive switching (RS) memory applications. The intermediate ZnO switching layers were deposited using the spin-coating technique at 2500 rpm. The structural analysis validates the presence of wurtzite structure along the c-axis. The morphological analysis reveals that the grains are uniformly distributed of the deposited thin films. The PL emission spectrum of the ZnO thin film shows highly intensive peak at 382 nm. The obtained ZnO thin film was formed onto ITO substrate which was sandwiched between top and bottom Ag electrodes. The current–voltage measurements (I–V) and ln I–V plots characteristics of the fabricated ITO/ZnO/Ag devices were examined for UV photoresponse (under dark and UV illumination), and resistive switching (RS) behavior. The fabricated device shows a stable resistive switching characteristics and UV photoresponse with photoresponsivity (R) value of 0.52 mA W−1. The fabricated ITO/ZnO/Ag devices shows rise time 4.35 s and 9.25 s decay time respectively. The optical sensing mechanism of ITO/ZnO/Ag were explored by oxygen (O2) adsorption/desorption processes in Ag/ZnO and ITO/ZnO junctions across the interface. Institute of Physics 2025-03 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/44314/1/Modulation%20of%20structural%20and%20photoluminescence%20properties%20of%20ZnO.pdf Kossar, Shahnaz and Rasool, Asif and Rafiudeen, Amiruddin and Ahmad Syakirin, Ismail @ Rosdi and M H, Mamat and Sharma, Jyoti (2025) Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications. Engineering Research Express, 7 (1). pp. 1-15. ISSN 2631-8695. (Published) https://doi.org/10.1088/2631-8695/adbcfa https://doi.org/10.1088/2631-8695/adbcfa |
| spellingShingle | TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering TP Chemical technology Kossar, Shahnaz Rasool, Asif Rafiudeen, Amiruddin Ahmad Syakirin, Ismail @ Rosdi M H, Mamat Sharma, Jyoti Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications |
| title | Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications |
| title_full | Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications |
| title_fullStr | Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications |
| title_full_unstemmed | Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications |
| title_short | Modulation of structural and photoluminescence properties of ZnO thin films for photodetector and resistive switching applications |
| title_sort | modulation of structural and photoluminescence properties of zno thin films for photodetector and resistive switching applications |
| topic | TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering TP Chemical technology |
| url | http://umpir.ump.edu.my/id/eprint/44314/1/Modulation%20of%20structural%20and%20photoluminescence%20properties%20of%20ZnO.pdf http://umpir.ump.edu.my/id/eprint/44314/ https://doi.org/10.1088/2631-8695/adbcfa https://doi.org/10.1088/2631-8695/adbcfa |
| url_provider | http://umpir.ump.edu.my/ |