Electrical and optical characterization of Mg doping in GaN
Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that suc...
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| Format: | Article |
| Language: | en |
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Trans Tech Publications, Switzerland
2013
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| Online Access: | http://eprints.um.edu.my/9783/1/00011485_86655.pdf http://eprints.um.edu.my/9783/ |
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| author | Azimah, E. Zainal, N. Hassan, Z. Shuhaimi, A. Bahrin, A. |
| author_facet | Azimah, E. Zainal, N. Hassan, Z. Shuhaimi, A. Bahrin, A. |
| author_sort | Azimah, E. |
| building | UM Library |
| collection | Institutional Repository |
| content_provider | Universiti Malaya |
| content_source | UM Research Repository |
| continent | Asia |
| country | Malaysia |
| description | Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the
sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that such behavior isrelated to degradation of surface morphology of metal contact at higher temperature. |
| format | Article |
| id | my.um.eprints-9783 |
| institution | Universiti Malaya |
| language | en |
| publishDate | 2013 |
| publisher | Trans Tech Publications, Switzerland |
| record_format | eprints |
| spelling | my.um.eprints-97832014-04-28T02:20:59Z http://eprints.um.edu.my/9783/ Electrical and optical characterization of Mg doping in GaN Azimah, E. Zainal, N. Hassan, Z. Shuhaimi, A. Bahrin, A. QC Physics T Technology (General) Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that such behavior isrelated to degradation of surface morphology of metal contact at higher temperature. Trans Tech Publications, Switzerland 2013 Article PeerReviewed application/pdf en http://eprints.um.edu.my/9783/1/00011485_86655.pdf Azimah, E. and Zainal, N. and Hassan, Z. and Shuhaimi, A. and Bahrin, A. (2013) Electrical and optical characterization of Mg doping in GaN. Advanced Materials Research, 620. pp. 453-457. DOI https://doi.org/10.4028/www.scientific.net/AMR.620.453 <https://doi.org/10.4028/www.scientific.net/AMR.620.453>. doi:10.4028/www.scientific.net/AMR.620.453 |
| spellingShingle | QC Physics T Technology (General) Azimah, E. Zainal, N. Hassan, Z. Shuhaimi, A. Bahrin, A. Electrical and optical characterization of Mg doping in GaN |
| title | Electrical and optical characterization of Mg doping in GaN |
| title_full | Electrical and optical characterization of Mg doping in GaN |
| title_fullStr | Electrical and optical characterization of Mg doping in GaN |
| title_full_unstemmed | Electrical and optical characterization of Mg doping in GaN |
| title_short | Electrical and optical characterization of Mg doping in GaN |
| title_sort | electrical and optical characterization of mg doping in gan |
| topic | QC Physics T Technology (General) |
| url | http://eprints.um.edu.my/9783/1/00011485_86655.pdf http://eprints.um.edu.my/9783/ |
| url_provider | http://eprints.um.edu.my/ |