Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction
This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase...
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| Language: | en |
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Trans Tech Publications, Switzerland
2013
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| Online Access: | http://eprints.um.edu.my/9782/1/00011485_86654.pdf http://eprints.um.edu.my/9782/ |
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| author | Ali, A.H. Shuhaimi, A. Hassan, Z. Yusoff, Y. |
| author_facet | Ali, A.H. Shuhaimi, A. Hassan, Z. Yusoff, Y. |
| author_sort | Ali, A.H. |
| building | UM Library |
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| content_provider | Universiti Malaya |
| content_source | UM Research Repository |
| continent | Asia |
| country | Malaysia |
| description | This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW)
active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63o and 72.98o,respectively. Rocking curve φ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC) ω-scan, screw and mix dislocation density is found as 2.85 × 109 cm-2, while pure edge dislocation density is found as 2.23 × 1011 cm-2. |
| format | Article |
| id | my.um.eprints-9782 |
| institution | Universiti Malaya |
| language | en |
| publishDate | 2013 |
| publisher | Trans Tech Publications, Switzerland |
| record_format | eprints |
| spelling | my.um.eprints-97822014-04-28T02:17:04Z http://eprints.um.edu.my/9782/ Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction Ali, A.H. Shuhaimi, A. Hassan, Z. Yusoff, Y. Q Science (General) QC Physics This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63o and 72.98o,respectively. Rocking curve φ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC) ω-scan, screw and mix dislocation density is found as 2.85 × 109 cm-2, while pure edge dislocation density is found as 2.23 × 1011 cm-2. Trans Tech Publications, Switzerland 2013 Article PeerReviewed application/pdf en http://eprints.um.edu.my/9782/1/00011485_86654.pdf Ali, A.H. and Shuhaimi, A. and Hassan, Z. and Yusoff, Y. (2013) Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction. Advanced Materials Research, 620. pp. 22-27. DOI https://doi.org/10.4028/www.scientific.net/AMR.620.22 <https://doi.org/10.4028/www.scientific.net/AMR.620.22>. doi:10.4028/www.scientific.net/AMR.620.22 |
| spellingShingle | Q Science (General) QC Physics Ali, A.H. Shuhaimi, A. Hassan, Z. Yusoff, Y. Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction |
| title | Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction |
| title_full | Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction |
| title_fullStr | Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction |
| title_full_unstemmed | Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction |
| title_short | Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction |
| title_sort | compositional and structural characterization of heterostructure ingan-based light-emitting diode by high resolution x-ray diffraction |
| topic | Q Science (General) QC Physics |
| url | http://eprints.um.edu.my/9782/1/00011485_86654.pdf http://eprints.um.edu.my/9782/ |
| url_provider | http://eprints.um.edu.my/ |