Direct synthesis of β-silicon carbide nanowires from graphite only without a catalyst

One-dimensional (1D) β-SiC nanowires were successfully fabricated on bare Si (1 0 0) substrate using simple carbo-thermal evaporation of graphite at 1200 °C. The obtained β-SiC nanowires were aligned with diameters ranged between 40 and 500 nm. The majority of crystal planes were β-SiC (1 1 1) with...

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Bibliographic Details

Main Authors:	Al-Ruqeishi, Majid S., Nor, Roslan Md, Amin, Yusoff Mohd, Al-Azri, Khalifa
Format:	Article
Published:	Elsevier 2010
Subjects:	Q Science (General) QC Physics
Online Access:	http://eprints.um.edu.my/7859/ https://doi.org/10.1016/j.jallcom.2010.03.025
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