APA (7th ed.) Citation

Othman, M., Ritikos, R., Khanis, N., Rashid, N., Gani, S., & Rahman, S. (2013). Effect of N2 flow rate on the properties of CNx thin films prepared by radio frequency plasma enhanced chemical vapor deposition from ethane and nitrogen.

Chicago Style (17th ed.) Citation

Othman, M., R. Ritikos, N.H Khanis, N.M.A Rashid, S.M.A Gani, and S.A Rahman. Effect of N2 Flow Rate on the Properties of CNx Thin Films Prepared by Radio Frequency Plasma Enhanced Chemical Vapor Deposition from Ethane and Nitrogen. 2013.

MLA (9th ed.) Citation

Othman, M., et al. Effect of N2 Flow Rate on the Properties of CNx Thin Films Prepared by Radio Frequency Plasma Enhanced Chemical Vapor Deposition from Ethane and Nitrogen. 2013.