Fabrication and characterization of tungsten disulphide/silicon heterojunction photodetector for near infrared illumination

Tungsten disulphide (WS 2 ), a member of the transition metal dichalcogenide (TMD) family that is known for its superior optoelectronic properties is used in this work to fabricate a low cost and highly efficient photodetector for operation in the near infrared (NIR) region. The WS 2 /Si heterojunct...

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Bibliographic Details

Main Authors:	Ahmad, Harith, Rashid, Haroon, Ismail, Mohammad Faizal, Thambiratnam, Kavintheran
Format:	Article
Published:	Elsevier 2019
Subjects:	QC Physics
Online Access:	http://eprints.um.edu.my/24341/ https://doi.org/10.1016/j.ijleo.2019.03.132
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