Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector
Molybdenum disulphide (MoS2), a member of the transition metal dichalcogenides family has shown excellent optoelectronic properties with direct or indirect bandgaps in visible range as well as good absorption in its 2-dimensional (2D) form. In this work, a polycrystalline MoS2 thin film is fabricate...
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Elsevier
2019
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| Online Access: | http://eprints.um.edu.my/24321/ https://doi.org/10.1016/j.ijleo.2019.163237 |
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| author | Ahmad, Harith Rashid, Haroon Ismail, Mohammad Faizal |
| author_facet | Ahmad, Harith Rashid, Haroon Ismail, Mohammad Faizal |
| author_sort | Ahmad, Harith |
| building | UM Library |
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| content_provider | Universiti Malaya |
| content_source | UM Research Repository |
| continent | Asia |
| country | Malaysia |
| description | Molybdenum disulphide (MoS2), a member of the transition metal dichalcogenides family has shown excellent optoelectronic properties with direct or indirect bandgaps in visible range as well as good absorption in its 2-dimensional (2D) form. In this work, a polycrystalline MoS2 thin film is fabricated by radio frequency magnetron sputtering. X-ray diffraction (XRD) analysis of the fabricated sample reveals two hexagonal structured peaks along the (100) and (110) planes, while energy-dispersive X-ray (EDX) spectroscopy confirms a non-stoichiometric MoS2 film with a thickness of 300 nm. Raman shifts are observed at the E1 2g and A1g phonon modes, located at 374.37 cm−1 and 407.75 cm−1 respectively. A sandwiched heterojunction photodetector with a SLG/n-MoS2/p-Si structure is fabricated and illuminated with violet light at 441 nm. The device exhibits significant optoelectronic properties at various laser powers at a 10 V bias voltage. The maximum value of the photocurrent is calculated as 0.79 μA, with the responsivity as 10.4 mAW−1 and detectivity of 6.74 × 109 Jones at an intensity of 0.004 mW/cm2. These results highlight the adaptability of the current technique that will help realize large-scale production as well as allow for the development of advanced optoelectronic devices. © 2019 Elsevier GmbH |
| format | Article |
| id | my.um.eprints-24321 |
| institution | Universiti Malaya |
| publishDate | 2019 |
| publisher | Elsevier |
| record_format | eprints |
| spelling | my.um.eprints-243212020-05-19T01:10:44Z http://eprints.um.edu.my/24321/ Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector Ahmad, Harith Rashid, Haroon Ismail, Mohammad Faizal QC Physics Molybdenum disulphide (MoS2), a member of the transition metal dichalcogenides family has shown excellent optoelectronic properties with direct or indirect bandgaps in visible range as well as good absorption in its 2-dimensional (2D) form. In this work, a polycrystalline MoS2 thin film is fabricated by radio frequency magnetron sputtering. X-ray diffraction (XRD) analysis of the fabricated sample reveals two hexagonal structured peaks along the (100) and (110) planes, while energy-dispersive X-ray (EDX) spectroscopy confirms a non-stoichiometric MoS2 film with a thickness of 300 nm. Raman shifts are observed at the E1 2g and A1g phonon modes, located at 374.37 cm−1 and 407.75 cm−1 respectively. A sandwiched heterojunction photodetector with a SLG/n-MoS2/p-Si structure is fabricated and illuminated with violet light at 441 nm. The device exhibits significant optoelectronic properties at various laser powers at a 10 V bias voltage. The maximum value of the photocurrent is calculated as 0.79 μA, with the responsivity as 10.4 mAW−1 and detectivity of 6.74 × 109 Jones at an intensity of 0.004 mW/cm2. These results highlight the adaptability of the current technique that will help realize large-scale production as well as allow for the development of advanced optoelectronic devices. © 2019 Elsevier GmbH Elsevier 2019 Article PeerReviewed Ahmad, Harith and Rashid, Haroon and Ismail, Mohammad Faizal (2019) Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector. Optik, 198. p. 163237. ISSN 0030-4026, DOI https://doi.org/10.1016/j.ijleo.2019.163237 <https://doi.org/10.1016/j.ijleo.2019.163237>. https://doi.org/10.1016/j.ijleo.2019.163237 doi:10.1016/j.ijleo.2019.163237 |
| spellingShingle | QC Physics Ahmad, Harith Rashid, Haroon Ismail, Mohammad Faizal Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector |
| title | Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector |
| title_full | Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector |
| title_fullStr | Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector |
| title_full_unstemmed | Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector |
| title_short | Investigation of structural and optoelectronic properties of n-MoS2/p-Si sandwiched heterojunction photodetector |
| title_sort | investigation of structural and optoelectronic properties of n-mos2/p-si sandwiched heterojunction photodetector |
| topic | QC Physics |
| url | http://eprints.um.edu.my/24321/ https://doi.org/10.1016/j.ijleo.2019.163237 |
| url_provider | http://eprints.um.edu.my/ |