APA (7th ed.) Citation

Zhao, F., Amnuayphol, O., Cheong, K. Y., Wong, Y. H., Jiang, J., & Huang, C. (2019). Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC. Elsevier.

Chicago Style (17th ed.) Citation

Zhao, Feng, Oliver Amnuayphol, Kuan Yew Cheong, Yew Hoong Wong, Jheng-Yi Jiang, and Chih-Fang Huang. Post Deposition Annealing Effect on Properties of Y2O3/Al2O3 Stacking Gate Dielectric on 4H-SiC. Elsevier, 2019.

MLA (9th ed.) Citation

Zhao, Feng, et al. Post Deposition Annealing Effect on Properties of Y2O3/Al2O3 Stacking Gate Dielectric on 4H-SiC. Elsevier, 2019.