A High-Efficiency Ultra-Broadband Mixed-Mode GaN HEMT Power Amplifier
In this brief, a new technique of efficiency enhancement of ultra-broadband RF power amplifier with simple load network approach is introduced, in which a combination of the reactance compensation and third-harmonic tuning is developed with design equations. The fabricated prototype board of the mix...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers
2018
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/21584/ https://doi.org/10.1109/TCSII.2018.2809491 |
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| Summary: | In this brief, a new technique of efficiency enhancement of ultra-broadband RF power amplifier with simple load network approach is introduced, in which a combination of the reactance compensation and third-harmonic tuning is developed with design equations. The fabricated prototype board of the mixed mode power amplifier demonstrated 10 W output power over a wide frequency band of 0.4-2.0 GHz with an efficiency greater than 62% and observes good agreement between simulation and measured output. This implementation is suitable for two-way radio product applications. |
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