Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical, and electrical properties of the resulting Sm2O3 lay...

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Bibliographic Details

Main Authors:	Goh, K.H., Haseeb, A.S. Md. Abdul, Wong, Y.H.
Format:	Article
Published:	Institute of Electrical and Electronics Engineers (IEEE) 2016
Subjects:	TJ Mechanical engineering and machinery
Online Access:	http://eprints.um.edu.my/17448/ http://dx.doi.org/10.1007/s11664-016-4694-z
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