Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate
Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical, and electrical properties of the resulting Sm2O3 lay...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2016
|
| Subjects: | |
| Online Access: | http://eprints.um.edu.my/17448/ http://dx.doi.org/10.1007/s11664-016-4694-z |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|