APA (7th ed.) Citation

Goh, K., Haseeb, A. M. A., & Wong, Y. (2016). Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate. Institute of Electrical and Electronics Engineers (IEEE).

Chicago Style (17th ed.) Citation

Goh, K.H, A.S. Md. Abdul Haseeb, and Y.H Wong. Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate. Institute of Electrical and Electronics Engineers (IEEE), 2016.

MLA (9th ed.) Citation

Goh, K.H, et al. Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate. Institute of Electrical and Electronics Engineers (IEEE), 2016.