Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations

Growth of 150 nm Sm2O3 films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm2O3 film and existence of...

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Bibliographic Details

Main Authors:	Goh, K.H., Haseeb, A.S. Md. Abdul, Wong, Y.H.
Format:	Article
Published:	Elsevier 2016
Subjects:	TJ Mechanical engineering and machinery
Online Access:	http://eprints.um.edu.my/17443/ http://dx.doi.org/10.1016/j.tsf.2016.03.051
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