Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient
The effects of oxidation and nitridation temperatures (500–1100°C) on metal-oxide-semiconductor characteristics of sputtered Zr thin film on Si in N2O ambient have been systematically investigated. The sample being oxidized and nitrided at 700°C has demonstrated the highest effective dielectric cons...
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| Main Authors: | , |
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| Format: | Article |
| Published: |
Springer Verlag (Germany)
2012
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| Online Access: | http://eprints.um.edu.my/13003/ http://link.springer.com/article/10.1007%2Fs13391-011-1067-x http://dx.doi.org/10.1007/s13391-011-1067-x |
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