Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while t...

Full description

Bibliographic Details

Main Authors:	Wong, Y.H., Cheong, K.Y.
Format:	Article
Published:	SpringerOpen 2011
Subjects:	TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery
Online Access:	http://eprints.um.edu.my/12996/ http://www.nanoscalereslett.com/content/6/1/489 http://dx.doi.org/10.1186/1556-276X-6-489
Tags:	Add Tag No Tags, Be the first to tag this record!