ZrO2 thin films on Si substrate

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptabl...

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Main Authors: Wong, Y.H., Cheong, K.Y.
Format: Article
Published: Kluwer (now part of Springer) 2010
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Online Access:http://eprints.um.edu.my/12995/
http://link.springer.com/article/10.1007%2Fs10854-010-0144-5
http://dx.doi.org/10.1007/s10854-010-0144-5
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author Wong, Y.H.
Cheong, K.Y.
author_facet Wong, Y.H.
Cheong, K.Y.
author_sort Wong, Y.H.
building UM Library
collection Institutional Repository
content_provider Universiti Malaya
content_source UM Research Repository
continent Asia
country Malaysia
description In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO2 as high-κ dielectrics replacing SiO2 is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO2 thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed.
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institution Universiti Malaya
publishDate 2010
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spelling my.um.eprints-129952015-03-11T01:59:35Z http://eprints.um.edu.my/12995/ ZrO2 thin films on Si substrate Wong, Y.H. Cheong, K.Y. TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO2 as high-κ dielectrics replacing SiO2 is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO2 thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed. Kluwer (now part of Springer) 2010-10 Article PeerReviewed Wong, Y.H. and Cheong, K.Y. (2010) ZrO2 thin films on Si substrate. Journal of Materials Science: Materials in Electronics, 21 (10). pp. 980-993. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-010-0144-5 <https://doi.org/10.1007/s10854-010-0144-5>. http://link.springer.com/article/10.1007%2Fs10854-010-0144-5 http://dx.doi.org/10.1007/s10854-010-0144-5
spellingShingle TA Engineering (General). Civil engineering (General)
TJ Mechanical engineering and machinery
Wong, Y.H.
Cheong, K.Y.
ZrO2 thin films on Si substrate
title ZrO2 thin films on Si substrate
title_full ZrO2 thin films on Si substrate
title_fullStr ZrO2 thin films on Si substrate
title_full_unstemmed ZrO2 thin films on Si substrate
title_short ZrO2 thin films on Si substrate
title_sort zro2 thin films on si substrate
topic TA Engineering (General). Civil engineering (General)
TJ Mechanical engineering and machinery
url http://eprints.um.edu.my/12995/
http://link.springer.com/article/10.1007%2Fs10854-010-0144-5
http://dx.doi.org/10.1007/s10854-010-0144-5
url_provider http://eprints.um.edu.my/