Nano-MgO and nanostructured ZnO/MgO films: topology, morphology and dielectric properties / Habibah Zulkefle ... [et al.]
High leakage current and low dielectric constant, k has been reported as drawback of commercialize dielectric material which leads to the exploration of new dielectric materials. In this study, nano-MgO films and nanostructured ZnO/MgO bilayer dielectric films were synthesized using sol-gel spin coa...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | en |
| Published: |
UiTM Press
2024
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/94737/1/94737.pdf https://ir.uitm.edu.my/id/eprint/94737/ |
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| Summary: | High leakage current and low dielectric constant, k has been reported as drawback of commercialize dielectric material which leads to the exploration of new dielectric materials. In this study, nano-MgO films and nanostructured ZnO/MgO bilayer dielectric films were synthesized using sol-gel spin coating method and deposited at various MgO solution concentration. The uniform nano-ZnO film was utilized as the oxide dielectric template to produce nanostructured ZnO/MgO bilayer films. The effect of MgO solution concentration towards topology, morphology and dielectric properties of nano-MgO films and nanostructured ZnO/MgO bilayer films were investigated. The variation of solution concentrations revealed that nano-MgO film and nanostructured ZnO/MgO bilayer film with 0.4 M MgO concentration produced improvement in the dielectric properties (dielectric constant, k) which is 4.9 and 5.71 respectively. This is caused by the uniform particle distributions and well-defined structure produced in these films. Besides, the bilayer film structure (nanostructured ZnO/MgO bilayer films) was found to produce slightly higher k value in comparison to single layer structure (nano-MgO films). |
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