Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.]
This technical paper investigates the effect of doping techniques, type of dopant species and the plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers are highly doped using either solid source (SS) or spin-on dopant (SOD) method. Experiments are ca...
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| Format: | Article |
| Language: | en |
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UiTM Press
2010
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| Online Access: | https://ir.uitm.edu.my/id/eprint/61883/1/61883.pdf https://ir.uitm.edu.my/id/eprint/61883/ https://jeesr.uitm.edu.my/v1/ |
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| author | Zoolfakar, Ahmad Sabirin Yaacob, Ahmad Akmalhakim Zolkapli, Maizatul Zakaria, Azlan Abdul Wahab, Mohd Zahrin |
| author_facet | Zoolfakar, Ahmad Sabirin Yaacob, Ahmad Akmalhakim Zolkapli, Maizatul Zakaria, Azlan Abdul Wahab, Mohd Zahrin |
| author_sort | Zoolfakar, Ahmad Sabirin |
| building | Tun Abdul Razak Library |
| collection | Institutional Repository |
| content_provider | Universiti Teknologi Mara |
| content_source | UiTM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | This technical paper investigates the effect of doping techniques, type of dopant species and the plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers are highly doped using either solid source (SS) or spin-on dopant (SOD) method. Experiments are carried out at three different diffusion temperatures, 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source while larger plate size leads to a larger capacitance value. In addition, the experiment also shows that n-type wafer heavily doped with phosphorus exhibits a higher capacitance density. |
| format | Article |
| id | my.uitm.ir-61883 |
| institution | Universiti Teknologi Mara |
| language | en |
| publishDate | 2010 |
| publisher | UiTM Press |
| record_format | eprints |
| spelling | my.uitm.ir-618832025-07-31T03:47:14Z https://ir.uitm.edu.my/id/eprint/61883/ Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.] jeesr Zoolfakar, Ahmad Sabirin Yaacob, Ahmad Akmalhakim Zolkapli, Maizatul Zakaria, Azlan Abdul Wahab, Mohd Zahrin TK Electrical engineering. Electronics. Nuclear engineering This technical paper investigates the effect of doping techniques, type of dopant species and the plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers are highly doped using either solid source (SS) or spin-on dopant (SOD) method. Experiments are carried out at three different diffusion temperatures, 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source while larger plate size leads to a larger capacitance value. In addition, the experiment also shows that n-type wafer heavily doped with phosphorus exhibits a higher capacitance density. UiTM Press 2010-06 Article PeerReviewed text en https://ir.uitm.edu.my/id/eprint/61883/1/61883.pdf Zoolfakar, Ahmad Sabirin and Yaacob, Ahmad Akmalhakim and Zolkapli, Maizatul and Zakaria, Azlan and Abdul Wahab, Mohd Zahrin (2010) Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.]. (2010) Journal of Electrical and Electronic Systems Research (JEESR) <https://ir.uitm.edu.my/view/publication/Journal_of_Electrical_and_Electronic_Systems_Research_=28JEESR=29.html>, 3 (1): 10. pp. 82-88. ISSN 1985-5389 https://jeesr.uitm.edu.my/v1/ |
| spellingShingle | TK Electrical engineering. Electronics. Nuclear engineering Zoolfakar, Ahmad Sabirin Yaacob, Ahmad Akmalhakim Zolkapli, Maizatul Zakaria, Azlan Abdul Wahab, Mohd Zahrin Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.] |
| title | Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.] |
| title_full | Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.] |
| title_fullStr | Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.] |
| title_full_unstemmed | Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.] |
| title_short | Investigation of doping techniques on the silicon based capacitor / Ahmad Sabirin Zoolfakar ...[et al.] |
| title_sort | investigation of doping techniques on the silicon based capacitor / ahmad sabirin zoolfakar ...[et al.] |
| topic | TK Electrical engineering. Electronics. Nuclear engineering |
| url | https://ir.uitm.edu.my/id/eprint/61883/1/61883.pdf https://ir.uitm.edu.my/id/eprint/61883/ https://jeesr.uitm.edu.my/v1/ |
| url_provider | http://ir.uitm.edu.my/ |