Ohmic contacts properties Pd/Ag metallization scheme on P-type GaN / C. W. Lim … [et al.]
In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact r...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2004
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/51193/1/51193.PDF https://ir.uitm.edu.my/id/eprint/51193/ |
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| Summary: | In this work, we report on the characteristics of Pd/Ag metallization scheme deposited using thermal evaporation for the formation of ohmic contacts to p-type GaN. The electrical behavior and thermal stability at different annea1ing temperatures (400DC - 800DC) were: investigated. Specific contact resistivity using transmission Line Method (TLM) and current voltage (J-V) measurements were investigated. The minimum specific contact resistivity of 3.9 Qcm2 achieved after annealing at SOODC for 6 minutes. Changes in tile surface morphology off the contacts were observed using Scanning Electron Microscopy (SEM). |
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