Mahat, A. M. (2019). Novel synthesis of Al2-xHfxO3 materials and the fabrication of gate dielectric thin films for metal oxide semiconductor applications / Annie Maria Mahat.
Chicago Style (17th ed.) CitationMahat, Annie Maria. Novel Synthesis of Al2-xHfxO3 Materials and the Fabrication of Gate Dielectric Thin Films for Metal Oxide Semiconductor Applications / Annie Maria Mahat. 2019.
MLA (9th ed.) CitationMahat, Annie Maria. Novel Synthesis of Al2-xHfxO3 Materials and the Fabrication of Gate Dielectric Thin Films for Metal Oxide Semiconductor Applications / Annie Maria Mahat. 2019.
Warning: These citations may not always be 100% accurate.