Simulation of drain induced barrier lowering (DIBL) in metal oxide semiconductor field effect transistor (MOSFET): artikel

This paper shows Simulation of Drain Induced Barrier Lowering (DIBL) in Metal Oxide Semiconductor Field Effect Transistor (MOSFET)”. The research and study on this is investigated. Using software from SILVACO International, the simulation of the N-channel metal oxide semiconductor (NMOS) can be stud...

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Bibliographic Details

Main Authors:	Nelson, Florence Elna, Manut, Azrif
Format:	Article
Language:	en
Published:	2013
Subjects:	TK Electrical engineering. Electronics. Nuclear engineering Telecommunication
Online Access:	https://ir.uitm.edu.my/id/eprint/127350/2/127350.pdf https://ir.uitm.edu.my/id/eprint/127350/
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