The development and analysis of the strained Si on relaxed Si₀̣₇Ge₀̣₃/Si N-MOS
The electrical characteristics of the Si₀̣₇Ge₀̣₃ on relaxed Si N-MOS are compared with the conventional Si N-MOS developed by the simulation of basic fabrication processes. From the result, it will show that the Si₀̣₇Ge₀̣₃/Si N-MOS gives better performance than the Si N-MOS. Based on the simulated e...
Saved in:
| Main Author: | |
|---|---|
| Format: | Student Project |
| Language: | en |
| Published: |
2007
|
| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/122733/1/122733.pdf https://ir.uitm.edu.my/id/eprint/122733/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|