The electrical and optical characterization of porous GaN for photodetector device application / Mir Ahmad Fikry Mohd Faudzi
Gallium Nitride (GaN) is a material that is widely used in a variety of applications, including photodetectors, due to its unique features. However, a major difficulty encountered in these applications is the devices' poor sensitivity and light absorption capacity. The invention of MSM photodet...
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| Format: | Student Project |
| Language: | en |
| Published: |
2025
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| Online Access: | https://ir.uitm.edu.my/id/eprint/118028/1/118028.pdf https://ir.uitm.edu.my/id/eprint/118028/ |
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