The development and analysis of the strained Si on relaxed Si₀.₇Ge₀.₃/Si N-MOS

The electrical characteristics of the Si₀.₇Ge₀.₃ on relaxed Si N-MOS are compared with the conventional Si N-MOS developed by the simulation of basic fabrication processes. From the result, it will show that the Si₀.₇Ge₀.₃/Si N-MOS gives better performance than the Si N-MOS. Based on the simulated e...

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Bibliographic Details

Main Author:	Abbas, Mohd Hussaini
Format:	Student Project
Language:	en
Published:	2007
Subjects:	TK Electrical engineering. Electronics. Nuclear engineering Electric apparatus and materials. Electric circuits. Electric networks
Online Access:	https://ir.uitm.edu.my/id/eprint/114833/1/114833.pdf https://ir.uitm.edu.my/id/eprint/114833/
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