Investigation of SnO2 doped Al2O3 thin film via electrospinning with different annealing temperature / Muhammad Nizar Aiman Mohd Zani
Tin Oxide (SnO2) is an n type semiconductor with direct band gap of 3.6eV. It is highly conducting, transparent and sensitive to gases. The energy band gap is one of the important parameter of SnO2. This work was to characterize the optical properties of SnO2 with different annealing temperature. Th...
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| Format: | Student Project |
| Language: | en |
| Published: |
2019
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| Online Access: | https://ir.uitm.edu.my/id/eprint/102901/1/102901.pdf https://ir.uitm.edu.my/id/eprint/102901/ |
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