Investigation of SnO2 doped Al2O3 thin film via electrospinning with different annealing temperature / Muhammad Nizar Aiman Mohd Zani

Tin Oxide (SnO2) is an n type semiconductor with direct band gap of 3.6eV. It is highly conducting, transparent and sensitive to gases. The energy band gap is one of the important parameter of SnO2. This work was to characterize the optical properties of SnO2 with different annealing temperature. Th...

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Bibliographic Details
Main Author: Mohd Zani, Muhammad Nizar Aiman
Format: Student Project
Language:en
Published: 2019
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/102901/1/102901.pdf
https://ir.uitm.edu.my/id/eprint/102901/
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