Simulation of Planar and Finfet Transistor Model for Digital Gate Applications / Siti Aishah Abu Salim

In this work, FinFET (dual-gate) transistor is simulated using computer added design (CAD) tools to replace the conventional planar MOSFET. Nowadays planar transistors are no longer clean due to current leakage during on-off switches. Thus, these effects have caused some heat and power issues. FinFE...

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Bibliographic Details

Main Author:	Abu Salim, Siti Aishah
Format:	Thesis
Language:	en
Published:	2013
Subjects:	Apparatus and materials
Online Access:	https://ir.uitm.edu.my/id/eprint/102692/1/102692.pdf https://ir.uitm.edu.my/id/eprint/102692/
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