Thermal stablity of heavily carbon-doped GaAs
This paper investigates the effect of post-growth anneals (500'C-800'C) on the thermal stability of the carbondoped structures. Hall measurements reveal that the hole concentration aecreases steadily with increasing temperatures between 500'C and 800'C for all the heavily carbo...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
2004
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| Subjects: | |
| Online Access: | https://library.oum.edu.my/repository/67/1/Thermal_stability.pdf https://library.oum.edu.my/repository/67/ |
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