Doping effect on bandgap energy and luminescence spectrum for AlN-based semiconductor

This ongoing work reports the heavy doping effect on the Aluminum Nitride (AlN) semiconductor (SC) material, illustrated via its energy-band structure (EBS). The research correlates the bandgap energy (BE) and depletion region (DR), which are then applied to the estimation of light-emitting diode (L...

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Bibliographic Details

Main Authors:	Faris Azim Ahmad Fajri, Faris Azim, Hairol Aman, Mohammad Amirul, Ahmad Noorden, Ahmad Fakhrurrazi, Abdul Hamid, Ahmad Noor, Abdul Aziz, Azni
Format:	Proceeding Paper
Language:	en en
Published:	Springer Science and Business Media Deutschland GmbH 2022
Subjects:	QC Physics
Online Access:	http://irep.iium.edu.my/99956/1/99956_Doping%20effect%20on%20bandgap%20energy.pdf http://irep.iium.edu.my/99956/2/99956_Doping%20effect%20on%20bandgap%20energy_SCOPUS.pdf http://irep.iium.edu.my/99956/ https://link.springer.com/chapter/10.1007/978-981-16-8903-1_5
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