Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes

We study the effect of electron irradiation on the electrical and optical characteristics of commercial gallium-nitride light emitting diodes in the fluence region from 1015 to 1017 electrons/cm2. After electron irradiation, the forward leakage current shows no significant changes, while the reverse...

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Bibliographic Details

Main Authors:	Hedzir, Anati Syahirah, Muridan, Norasmahan, Yusof, Abdullah, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	en en en
Published:	Vlokh Institute of Physical Optics, 2019
Subjects:	QC Physics TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/75400/1/75400_Effect%20of%20electron%20irradiation.pdf http://irep.iium.edu.my/75400/2/75400_Effect%20of%20electron%20irradiation_WOS.pdf http://irep.iium.edu.my/75400/13/75400_Effect%20of%20electron%20irradiation%20on%20the%20electrical%20and%20optical%20characteristics%20of%20gallium-nitride%20light%20emitting%20diodes_Scopus.pdf http://irep.iium.edu.my/75400/ http://ifo.lviv.ua/journal/UJPO_PDF/2019_3/0503_2019.pdf
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