Leakage current mechanisms in silicon carbide MOSFETs - a review

MOSFETs are integral components in modern electronics, renowned for their efficiency and performance. However, leak age currents, including drain-source (IDSS) and gate-source (IGSS) currents, pose significant challenges to device reliability and overall system efficiency, leading to issues such...

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Bibliographic Details

Main Authors:	Baba, Tamana, Hasbullah, Nurul Fadzlin, Saidin, Norazlina, Siddiqui, Naseeb Ahmed, Üzüm, Abdullah, Turhal, Mehmet
Format:	Article
Language:	en en en
Published:	Springer 2025
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/125592/1/125592_Leakage%20current%20mechanisms.pdf http://irep.iium.edu.my/125592/2/125592_Leakage%20current%20mechanisms_SCOPUS.pdf http://irep.iium.edu.my/125592/3/125592_Leakage%20current%20mechanisms_WOS.pdf http://irep.iium.edu.my/125592/ https://link.springer.com/article/10.1007/s42341-025-00668-y
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