Effect of low-energy proton radiation on the degradation of silicon carbide Schottky diodes

Silicon carbide (SiC) Schottky diodes are gaining traction for their potential in high-voltage, high-temperature, and radiation-resistant applications. While superior to traditional silicon (Si) diodes, their radiation hardness requires further exploration, particularly at lower energies. Although h...

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Bibliographic Details

Main Authors:	Baba, Tamana, Hasbullah, Nurul Fadzlin, Javed, Yasir, Khan, Zafar Iqbal, Sulaiman, Nurul Nabiilah
Format:	Article
Language:	en en en
Published:	Springer 2025
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices TK9001 Nuclear engineering. Atomic power
Online Access:	http://irep.iium.edu.my/125590/1/125590_Effect%20of%20low-energy%20proton.pdf http://irep.iium.edu.my/125590/2/125590_Effect%20of%20low-energy%20proton_SCOPUS.pdf http://irep.iium.edu.my/125590/3/125590_Effect%20of%20low-energy%20proton_WOS.pdf http://irep.iium.edu.my/125590/ https://link.springer.com/article/10.1007/s11664-025-11939-y
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