High energy electron radiation inducing non-homogeneous structural changes on single layer graphene/SiO2/Si substrate

Graphene’s performance under radiation is crucial for its potential applications in radiation-hardened electronics. In this study, we investigate the physical topology and lattice modification of single layer graphene (SLG) grown on a SiO2/Si substrate when exposed to high energy (MeV) electron radi...

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Bibliographic Details

Main Authors:	Guzali, Hazim, Ayob, Nur Idayu, Mohamad, Muhammad Naim Hanif, Zamzuri, Ahmad Syahmi, Che Hak, Cik Rohaida, Ahmad, Zuraida, Md Ralib @ Md Raghib, Aliza 'Aini
Format:	Article
Language:	en en en
Published:	Elsevier 2025
Subjects:	QC Physics T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/120726/2/Rights%20and%20Access%20Agreement.pdf http://irep.iium.edu.my/120726/13/120726_High%20energy%20electron%20radiation%20inducing.pdf http://irep.iium.edu.my/120726/14/120726_High%20energy%20electron%20radiation%20inducing_Scopus.pdf http://irep.iium.edu.my/120726/ https://www.sciencedirect.com/science/article/abs/pii/S0969806X25003408?via%3Dihub https://doi.org/10.1016/j.radphyschem.2025.112848
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