Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

This work reports the effect of doping concentration on the energy-band structure of semiconductor materials. The research focuses on the resultant values of bandgap energy and its depletion region (length/area), based on the initial concentrations of doping which are the donors and acceptors. Th...

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Bibliographic Details

Main Authors:	Ahmad Fajri, Faris Azim, Ahmad Noorden, Ahmad Fakhrurrazi, Abdul Aziz, Azni
Format:	Article
Language:	en en
Published:	IOP Publishing 2021
Subjects:	QC Physics
Online Access:	http://irep.iium.edu.my/114344/1/114344_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy.pdf http://irep.iium.edu.my/114344/7/114344_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy_Scopus.pdf http://irep.iium.edu.my/114344/ https://iopscience.iop.org/issue/1742-6596/1892/1
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