Efects of electron blocking layer thickness on the electrical and optical properties of AlGaN based deep ultraviolet light emitting diode

The aluminum gallium nitride (AlGaN)-based deep-ultraviolet light-emitting diode (DUV-LED) has been a prominent device due to its contribution in various fields. The electron blocking layer (EBL) is an additional layer in the epitaxy of the DUV-LED with the aim of reducing the overflow of electrons...

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Bibliographic Details

Main Authors:	Hairol Aman, Mohammad Amirul, Ahmad Noorden, Ahmad Fakhrurrazi, Abdul Kadir@Jaafar, Muhammad Zamzuri, Danial, Wan Hazman, Daud, Suzairi
Format:	Article
Language:	en en
Published:	Springer 2024
Subjects:	QC Physics
Online Access:	http://irep.iium.edu.my/114023/7/114023_%20Efects%20of%20electron%20blocking%20layer%20thickness.pdf http://irep.iium.edu.my/114023/13/114023_Effects%20of%20Electron%20Blocking%20Layer%20Thickness%20on%20the%20Electrical%20and%20Optical%20Properties%20of%20AlGaN-Based%20Deep-Ultraviolet%20Light-Emitting%20Diode_SCOPUS.pdf http://irep.iium.edu.my/114023/ https://link.springer.com/article/10.1007/s11664-024-11190-x https://doi.org/10.1007/s11664-024-11190-x
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