Radiation-induced degradation of silicon carbide MOSFETs – a review

Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can experi...

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Bibliographic Details

Main Authors:	Baba, Tamana, Siddiqui, Naseeb Ahmed, Saidin, Norazlina, Md Yusoff, Siti Harwani, Abdul Sani, Siti Fairus, Abdul Karim, Julia, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	en en
Published:	Elsevier 2024
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/109675/1/Radiation_nduced_degradation_of_silicon_carbide_MOSFETs_A_review.pdf http://irep.iium.edu.my/109675/7/109675_Radiation-induced%20degradation_SCOPUS.pdf http://irep.iium.edu.my/109675/ https://www.sciencedirect.com/science/article/abs/pii/S0921510723008383
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