Effect of proton radiation on gallium nitride light emitting diodes

The compound semiconductor gallium nitride offers enormous potential for facilitating economic expansion in the silicon-based semiconductor industry, which is currently seeing decreasing performance returns compared to investment costs. Its high electron mobility and electric field strength at the m...

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Bibliographic Details

Main Authors:	Baba, Tamana, Husni, Muhammad Hazeeq, Saidin, Norazlina, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	en en
Published:	Institute of Advanced Engineering and Science (IAES) 2024
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/109673/7/109673_Effect%20of%20proton%20radiation%20on%20gallium%20nitride%20light%20emitting%20diodes.pdf http://irep.iium.edu.my/109673/13/109673_Effect%20of%20proton%20radiation%20on%20gallium%20nitride%20light%20emitting%20diodes_SCOPUS.pdf http://irep.iium.edu.my/109673/ https://beei.org/index.php/EEI/article/view/6205 https://doi.org/10.11591/eei.v13i1.6205
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